Au etch 200 - 5.00 l nbtaue Bottle size: 5.00 l Au etch 200 Gold Etchant   General Information Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1 µm Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Not hazardous substance and easy to handle Selectivity Au etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta Metals: attacked Au, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Au etch 200 english Sicherheitsdatenblatt Au etch 200 german TDS: Technical Data Sheet Au etch 200 english Technical Data Sheet Au etch 200 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing AZ 10XT Photoresist (220cP) - 3.785 l 1A10XT220 AZ® 10XT (220CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (220cps) english Safety Data Sheet AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing AZ 10XT Photoresist (520cP) - 3.785 l 1A010XT00 Bottle size: 3.785 l AZ® 10XT (520CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (520cps) english Safety Data Sheet AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Anwendungshinweis: Further Information about Photoresist Processing AZ 125nXT-10B Photoresist - 3.785 l nXT10B Bottle size: 3.785 l AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information The AZ® 125nXT-10B is an i-line sensitive, negative ultra-thick resist with steep resist sidewalls and high aspect ratio. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Features The ultra-thick negative resist AZ® 125nXT-10B covers a resist film thickness range of 20 - 50 µm and can be built up and processed to 100 µm and much more with adapted spin profiles. AZ® 125nXT-10B is only i-line sensitive and, as a special feature (for negative resists), does not require a post exposure bake after exposure for cross-linking, i.e. the AZ® 125nXT-10B photopolymerizes. Due to its low absorption, even very thick resist layers can be easily exposed and steep resist sidewalls can be achieved. This and its very good adhesion to all common substrate materials make this resist suitable for the galvanic molding of thick to very thick layers as well as DRIE. With low exposure doses or very thick resist layers - related to the respective resist film thickness - the resist profile becomes slightly negative, since the resist areas close to the substrate experience less cross-linking. If the electroplating process shows that these weakly cross-linked areas of the resist are attacked, but a higher structuring exposure dose is not an option, flood exposure (without a photomask) after development with very high doses can cross-link the resist sidewalls even near the substrate, which, however, makes it more difficult to strip the resist later. Even after such flood exposure, no further post exposure back is necessary. AZ® 125nXT-10B can generally be processed with resist films of less than 20 µm thick, but processing becomes problematic below 10 µm thickness: Since the additive responsible for cross-linking escapes from the resist surface during softbaking, only a few micrometers of the exposed resist surface are removed during development, which accounts for a correspondingly large proportion of the total thickness in the case of thin resist films. Developers AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® 125nXT-10B. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® 125nXT-10B. If TMAH-based developers cannot be used, a KOH-based developer in higher concentration than usual can be considered. Removers AZ® 125nXT-10B can be removed wet-chemically using conventional strippers, but stripping very thick cross-linked resist structures can be quite a challenge. If organic solvents are preferred for this, (hot) DMSO is recommended, which does not dissolve cross-linked resists, but can detach them from the substrate after a certain exposure time. This process can be accelerated by reducing the degree of cross-linking of the resist near the substrate by using a lower exposure dose. Alternatively, high-performance strippers such as the NMP-free TechniStrip P are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 125nXT-10B anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 125nXT-10B english Safety Data Sheet AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing AZ 12XT-20PL-10 Photoresist - 3.785 l 1A012XT Bottle size: 3.785 l AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-10 english Safety Data Sheet AZ® 12XT 20PL-10 german TDS: Technical Data Sheet AZ® 12XT 20PL-10 english Application Notes: Further Information about Photoresist Processing AZ 12XT-20PL-15 Photoresist - 3.785 l 1A012XT AZ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-15 english Safety Data Sheet AZ® 12XT 20PL-15 german TDS: Technical Data Sheet AZ® 12XT 20PL-15 english Application Notes: Further Information about Photoresist Processing AZ Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® Positive Thin Resists for Wet Etching   General Information The AZ® Photoresist belongs to the AZ® Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® Photoresist Series compared to thick resists allows for very fast development. AZ® Photoresist is the thinnest member of the AZ® Photoresist Series with a resist film thickness of approx. 500 nm at rpm. This resist is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® H Photoresist or AZ® Photoresist) can be useful, which reduces the risk of pinholes in the resist film caused by particles on the substrate and the corresponding etching defects. Further dilution of the AZ® is not recommended, as heavily diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does have to be diluted, the corresponding batches should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351Bor AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® Photoresist is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® Photoresist english Safety Data Sheet AZ® Photoresist german TDS: Technical Data Sheet AZ® Photoresist english Application Notes: Further Information about Photoresist Processing AZ HS Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® HS Positive Thin Resists for Wet Etching   General Information The AZ® HS Photoresist belongs to the AZ® Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100°C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® Photoresist Series compared to thick resists allows for very fast development. AZ® HS Photoresist achieves a resist film thickness of approx. 1.3 µm at rpm and is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® HS allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® Photoresist) can be useful, which reduces the risk of pinholes in the resist layer caused by particles on the substrate and the corresponding etching defects. AZ® HS Photoresist has the highest photoinitiator concentration within the AZ® Photoresist Series, is correspondingly high in contrast, and shows a particularly high development rate. Diluting the AZ® HS is not advisable, as diluted resists that are very rich in photoinitiators tend to quickly form particles. If the resist still needs to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1:4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K (also typically 1:4 diluted with water). For very fine resist structures, a slightly higher dilution of the developer can be helpful. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2:1 to 1:1 dilution (developer : water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® HS Photoresistis not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® HS anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® HS Photoresist english Safety Data Sheet AZ® HS Photoresist german TDS: Technical Data Sheet AZ® HS Photoresist english Application Notes: Further Information about Photoresist Processing AZ H Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® H Positive Thin Resists for Wet Etching   General Information The AZ® photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.1 µm ' 2.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® H Photoresist english Sicherheitsdatenblatt AZ® H Fotolack german TDS: Technical Data Sheet AZ® H Photoresist english Application Notes: Further Information about Photoresist Processing AZ Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® Positive Thin Resists for Wet Etching   General Information The AZ® photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® improve the stability of the resist mask for wet etching processes. At rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 ' 3.0 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.5 µm ' 3.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® Photoresist english Sicherheitsdatenblatt AZ® Fotolack german TDS: Technical Data Sheet AZ® Photoresist english Application Notes: Further Information about Photoresist Processing AZ 15nXT Photoresist (115cps) - 3.785 l 15nXT Bottle size: 3.785 l AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (115CPS) is a thick resist with approx. 3 - 5 µm film thickness and very steep resist sidewalls for e. g. RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (115CPS) covers a resist film thickness range of - depending on the spin speed - approx. 2 - 3 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The resist structures developed are very vertical with adjusted process parameters, becoming increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (115CPS) can be diluted with PGMEA = AZ® EBR Solvent; for thicker layers, the higher viscosity AZ® 15nXT (450CPS) is recommended. AZ® 15nXT (115CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (115CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (115CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (115CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Safety Data Sheet AZ® 15nXT (115CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing AZ 15nXT Photoresist (450cps) - 3.785 l 15nXT3 Bottle size: 3.785 l AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (450CPS) is a thick resist with a thickness of approx. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (450CPS) covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. With adjusted process parameters, the resist structures developed are vertical, increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (450CPS) can be diluted with PGMEA = AZ® EBR Solvent. AZ® 15nXT (450CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (450CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (450CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (450CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Safety Data Sheet AZ® 15nXT (450CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

PHOTORESIST

Positive, Negative and Image Reversal Resists

Positive resists form an indene carboxylic acid during exposure making them soluble in aqueous alkaline solutions. Therefore, positive resists develop where they have been exposed, while the unexposed areas remain on the substrate. Since positive resists do not cross-link, the resist structures rounden beyond their softening point of typically 100-130°C.
Negative resists such as the AZ® nLOF series or the AZ® 15nXT or 125nXT cross-link after exposure and (not required for the AZ® 125nXT) a subsequent baking step, while the unexposed part of the resist is dissolved in the developer. The crosslinking makes the resist thermally stable, so even elevated temperatures will not deteriorate the resist profile. However, towards higher and higher process temperatures, the degree of crosslinking increases and it becomes hard or even impossible to wet-chemically remove the resist.
Image reversal resists can either be processed in positive or negative mode. In the positive mode, the process sequence is the same as for positive resists. In the image reversal mode, an image reversal bake after the exposure followed by a flood exposure without mask is required. Even in the negative mode, the degree of crosslinking of the resist is rather low, so the resist structures will rounden beyond the softening point of typically 130°C.

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Resist Coating Techniques

Spin-coating is the most common coating technique for resists. Almost all AZ® and TI resists are optimized for spin-coating and allow very smooth and homogeneous resist films. The attained resist film thickness goes with the reciprocal square root of the spin speed and thus is adjustable in a certain range for each resist. However, since the edge bead becomes more pronounced towards low spin speeds, for attaining thick films we recommend to use highly viscous resists such as the AZ® or AZ® 10XT, as well as suited spin profiles.

Spray coating allows the coating of almost arbitrary shaped and textured substrates. In order to attain a smooth and homogeneous resist film thickness as well as a good edge coverage of textures (if existing), an optimized resist composition with different solvents with low and high boiling points is required. The spray coating resists AZ® and TI Spray meet these requirements for almost all spray coating applications.

Dip coating is a suited coating technique for large, rectangular shaped substrates and the demand for a minimum resist consumption per coated area. For a homogeneous resist film thickness over the entire substrate, a certain solvent composition in the resist is required as realized in the MC Dip Coating Resist.

Fields of Application of the Resist Mask

Wet chemical etching requires an optimized adhesion to the substrate. For this purpose, we recommend the AZ® series for resist film thicknesses of 500 nm to 3 µm, the AZ® ECI series for 1-4 µm resist film thickness, or the AZ® series for films of several 10 µm thickness. In case of low resolution requirements, the PL 177 is a economically priced alternative. HF-containing etchants sometimes cause large-scale resist peeling as a consequence of HF-diffusion through the resist towards the substrate underneath. In this case, it's generally beneficial to increase the resist film thickness using resists such as the AZ® or the AZ® 10XT.

Dry etching requires an elevated softening point of the resist as well as steep sidewalls. The high-resolution AZ® 701 MIR 14CPS or 29CPS, are optimized for both requirements and reveal a softening point of 130°C.

Thick resists: If resist film thicknesses exceeding 5 µm are required, the thick positive resists AZ® or AZ® 10XT, or the negative AZ® 15nXT or AZ® 125nXT are recommended. The two nXT resists cross-link and therefore reveal an excellent thermal stability during dry etching.

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Lift-off processes recommend an undercut resist profile which can be attained with image reversal resists such as the AZ® E (resist film thickness 1-2 µm), the TI 35ESx (3-5 µm), or the AZ® nLOF (2-20 µm) negative resists. Additionally, these resists are thermally stable and therefore help to prevent a rounding of the resist structures during coating.
If the mask design requires positive resists for lift-off application, the resist sidewalls should be as steep as possible in order to prevent a coating of these sidewalls. For this purpose, we recommend the high-resolution resist AZ® 701 MIR 14CPS or 29CPS.

Electroplating requires an improved adhesion of the resist to the substrate as well as an enhanced stability of the resist in the electrolyte. The negative resists AZ® 15nXT (resist film thickness 5-30 µm) and AZ® 125nXT (up to approx. 150 µm) are optimized for these requirements. Both resists can be developed in TMAH-based developers, wet-chemically stripped in common removers, and are compatible with all common substrate materials and electrolytes for Cu-, Au-, and NiFe plating. If positive resists have to be used for electroplating, the AZ® series and the AZ® 10XT allow steep sidewalls and a good adhesion.

Attainable Resist Film Thicknesses

Generally, the last two digits of the resist name indicate the film thickness attained by spin coating (without gyrset) at rpm in 100 nm units. The thickness approximately decreases with the (increasing) square-root of the spin speed, so a given resist allows a certain range in the attainable resist film thickness. If the desired resist film thickness can/should not be realized by varying the spin speed, the usage of a different available viscosity of the given resist is recommended. Otherwise, the following has to be considered:

Dilution of high-viscosity resists with PGMEA (= AZ® EBR Solvent) allows to perform several applications with different film thicknesses using only one resist. However, diluted resists are sensitive to particle formation with a reduced expiry date depending on the resist, the dilution ratio and the storage temperature and -time for the diluted resist. Since the particles partially consist of the photo active compound, a particle filtration before usage increases the dark erosion and decreases the development rate of the resist. For information on specific dilution recipes please contact us.

Realizing thick films with low-viscosity resists is problematic for two main reasons:  i) The required low spin speeds increase the edge bead, and ii) in case of positive or image reversal resists, the rather high concentration of the photo active compound (low optical transparency) in typical 'thin resists' requires high exposure doses for a sufficient exposure, which makes steep resist profiles hard to realize and may cause popping and foaming by N2-bubbles formed during exposure.

Lateral Resolution and Aspect Ratio

The photoresist itself as well as the resist film thickness limit the theoretical resolution. Under optimum conditions, high-resolution thin resists such as the AZ® 701 MIR allow feature sizes of approx. 300 nm using i-line exposure.Beside a high absolute resolution, some processes require a high aspect ratio (ratio of the feature height to their width). Modern thick resists such as the AZ® 10XT allow an aspect ratio of 6-10, and even higher values under optimized process conditions.In many cases not the resist, but the equipment and process parameters limit the attainable resolution. In order to maximize the resolution of a given resist, besides the exposure conditions (no gap between mask and resist caused by particles, bubbles, or an edge bead), also the softbake parameters, the exposure dose, and the development (developer and its concentration, development time) have carefully to be optimized.

Spectral Sensitivity

The optical absorption (fig. right-hand) of unexposed positive photoresists ranges from approx. 460 nm in the VIS to near UV, which is matched to the emission spectrum of Hg lamps in mask aligners. This absorption spectrum causes the typical reddish-brownish colour of many photoresists. During exposure, photoresists almost completely bleach down to approx. 310 nm. Some modern positive resists such as the AZ® E or AZ® 10XT are not sensitive at g-line, while most negative resists such as the AZ® nLOF series, or the AZ® 15nXT and 125nXT are only sensitive near i-line and therefore appear almost uncoloured to the human eye.The optical absorption range does not end abruptly towards higher wavelengths. Therefore, high illumination intensity (e. g. laser scribing) or -times allow an exposure also some 10 nm towards the visible part of the spectrum. Some resists such as the PL 177, MC PC20 or AZ® 520D are dyed which makes it more easy to inspect the coating result.

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